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savantic semiconductor product specification silicon npn power transistors 2SD1880 description with to-3pml package high speed high breakdown voltage high reliability built in damper diode applications color tv horizontal deflection output color display horizontal deflection output. pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 6 v i c collector current 8 a i cm collector current-peak 30 a p c collector power dissipation 70 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pml) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1880 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0 800 v v cesat collector-emitter saturation voltage i c =6a ;i b =1.2a 5 v v besat base-emitter saturation voltage i c =6a ;i b =1.2a 1.5 v i cbo collector cut-off current v cb =800v ;i e =0 10 a i ebo emitter cut-off current v eb =4v ;i c =0 40 130 ma i ces collector cut-off current v ce =1500v 1.0 ma h fe-1 dc current gain i c =1a ; v ce =5v 8 h fe-2 dc current gain i c =6a ; v ce =5v 5 10 v f diode forward voltage i ec =8a 2 v t f fall time i c =6a;r l =33.3 @ i b1 =1.2a i b2 =-2.4a;v cc =200v 0.1 0.3 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD1880 package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon npn power transistors 2SD1880

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